The global Gan (gallium nitride) semiconductor devices market is expected to witness significant growth over the forecast period. The product is a robust material that encompasses several chemical properties due to which it is suitable in the manufacturing of various semiconductor devices. Gallium nitride semiconductor device market has been facing rigid competition from silicon carbide semiconductor devices, over the past few years. The popularity of the product is anticipated to grow at a fast pace on account of tremendous rise in its application markets.
Development of new technologies and increasing application scope of the product are the key drivers of this market. Gallium nitride semiconductor devices have tremendous opportunities in hybrid and electric vehicle while expensive industrial processes are one of the key challenges for this market.
One significant factor driving the product market is growth in the RF semiconductor devices industry. RF electronics industry has marginally different needs on characteristics of its components, semiconductor devices, and electronic devices associated with other segments of the global electronics sector. The industry is tightly interconnected to the communications industry and involves electronic devices to function at wide communication frequency ranges, stretching from standard frequencies to very high frequencies, depending on the applications.
Gallium nitride semiconductor material has great power characteristics as well as high operating frequency. The product is broadly used in the manufacturing of blue light emitting diodes for Blu-ray disc players and blue laser diodes. The growth of this sector is expected to have a positive impact on the industry over the next seven years.
Among the several applications of gallium nitride semiconductor devices, the consumer electronics sector accounted for the largest market share over the past few years, owing to rising penetration of the product in LED-based display and LED based lighting. The communication sector was the fastest growing and second largest application segment in the global market driven by the high product penetration in RF based application, including power electronics switching equipment.
Rising product demand from the industrial sector, solar power and wind energy industry is anticipated to fuel the growth of the global market over the forecast period. Moreover, rising application scope of the product in the aerospace and defense sector apart from electric vehicles is expected to open new opportunities for market development over the forecast period.
Gallium nitride semiconductor devices are much lighter, smaller but efficient and tougher than silicon semiconductor devices and work as perfect alternatives for their silicon comparable devices which have hit the maturity stage. Several additional features offered by gallium nitride in these devices are better stability in some radiation environments, low sensitivity to ionizing radiation, gallium nitride devices also have a scope in high-end power appliances in the military, defense & aerospace sector, solar cell arrays, and in satellites which are expected to fuel growth over the next seven years. Apart from this area, gallium nitride devices also have enormous revenue potential in transportation and automotive sector, chiefly in the hybrid electric and electric vehicles segment of the automotive industry.
There are a few major players present in the market . However, the number is anticipated to grow over the forecast period, with numerous start-ups and semiconductor industry giants entering into the field of gallium nitride semiconductor devices.
Presently, the overall gallium nitride power semiconductors market accounts for less than 1.0 % of the total power semiconductors market. However, electronics players & power semiconductors are anticipated to enter this new value chain, thus rapidly increasing its the percentage share over the forecast period.
Geographically the global market for gallium nitride semiconductor devices is segmented into North America, Asia-Pacific, Middle East and Asia, Europe and Latin America, while North America, Asia Pacific, and Europe comprise maximum market share. Europe and North America are the chief establishment base markets for gallium nitride semiconductor devices. These regions lead in investments, innovation, company activities, and development. Hence, these areas are projected to grow at a faster rate as compared to Asia Pacific excluding Japan over the next seven years.
Japan is anticipated to have the significant market share and dominate the gallium nitride wafer market over the forecast period. The market in Japan is driven by the upsurge in applications and numerous developments in the semiconductor industry. Japan plays an important role among all geographical regions, regarding distribution, and being headquarters to several key players in this country. Few of the foremost players in Japan for gallium nitride semiconductor devices include ROHM Company Limited, Toyoda Gosei Limited, Renesas Electronics, Toshiba Corporation, and Nichia Corporation.
The key market players in the global market for gallium nitride semiconductor devices include Toshiba Corp., NTT Advanced Technology Corporation, International Quantum Epitaxy Plc, Fujitsu Ltd., Mitsubishi Chemical Corporation, Cree Incorporated, EPIGEAN NV, Texas Instruments, RF Micro Devices Incorporated, AZZURRO Semiconductors AG, Koninklijke Philips N.V., and Aixtron SE.
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