Increasing gallium nitrite semiconductor devices demand in electronics industries, defense sector, power distribution systems and communication systems over silicon based semiconductor devices is expected to drive of gallium nitrite semiconductor market over the forecast period. Upcoming sectors including ICT (information and communication technology), industrial and power sector are expected to further facilitate gallium nitrite semiconductor market demand in the long run. Gallium nitrite semiconductor devices are facing a stiff market competition with silicon based semiconductor devices. Various gallium nitrite properties including large critical electrical field, high break down voltage, high oscillation frequency, high thermal conductivity and wider band gap are expected to positively influence gallium nitrite semiconductor devices operations at high switching frequencies, high voltage. In addition, gallium nitrite is also helpful in enhancing power efficiency by providing handling features at high power density operations. All these features are adding a competitive edge over existing silicon technology and emerging as a perfect solution for semiconductor devices Low pressure losses accompanied by higher operating temperature robust, reduction in conduction device integration on Si are the major drivers of Gallium nitrite semiconductor devices are capable to operate in high temperature conditions with a low pressures losses. Others gallium nitrite semiconductor devices features includes toughness, lighter, smaller and highly efficient making it as a best replacement for silicon based semiconductor devices. On account of huge market demand in automotive application segment, gallium nitrite semiconductor market is expected to market huge revenues specifically in electric vehicles & hybrid electric vehicles segment over the forecasted period. Aerospace industries and defense sector are expected to emerge as growing application segment with immense market opportunities. GaN defects, availability, design inertia and high cost are the major constraints of gallium nitrite semiconductor devices markets.
On the basis of application gallium nitrite semiconductor devices are used in various sector including computer sector, automotive sector, consumer electronics sector which further includes led lights and inverters, military and defense sector which deals with electronic warfare communication, ships and vessels, combat vehicles radiation hard electronics and others, aerospace sector, medical sector which includes bio-medical electronics and implantable medical devices, power sector which includes industrial systems, power distribution system, high-voltage direct current (HVDC), heavy machinery, wind Power systems, electro-mechanical computing systems, advanced industrial control system, turbines, smart grid power system, solar power systems & wind turbines and ICT sector with various communication application segments, wireless application, radar application, wired application devices, RF application and others. Global gallium nitrite semiconductor devices market can be segmented by product type which includes OPTO- semiconductor devices, GAN OPTO- semiconductor devices, power semiconductors devices and GAN power semiconductor devices. Gallium nitrite semiconductor device market can also be segmented on the basis of technologies used which can be further segmented into type of semiconductor material and transistor application technologies.
North America dominated the global gallium nitrate semiconductor markets due to huge demand in defense, aerospace industry and military sector. North America market is followed by Europe. Growth in Asia pacific countries including China, India and Japan are expected to increase gallium nitrite semiconductors market for the forecasted period. Middle East& Africa and Central and South America are also expected to exhibit significant market growth in the coming years.
Global Gallium Nitrite Semiconductor devices market is highly fragmented and competitive in nature. Key players in the global market include RF Micro Devices Inc., Azzurro Semiconductors AG, Freescale Semiconductors Incorporated, GaN Systems, Nippon Telegraph &Telephone, Fujitsu Limited, Epigan NV. Transphorm ,Toshiba Corp, Avogy , EPC , Poedec , Texas Instruments Inc., micro GaN , International Quantum Epitaxy (IQE) plc., NXP, International Rectifier Corporation Cree Inc. Aixtron SE, Nichia Corporation, Koninklijke Philips N.V and others. The market is expected to focus on application base expansions and attract regional industry participants for market development over the forecast period.
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