Global High-k and ALD/CVD Metal Precursors Market By Technology (Interconnect, Capacitor/Memory, Gates) Expected To Reach USD 705.9 Million By 2022: Grand View Research, Inc.

June 2016 | Report Format: Electronic (PDF)

The global high-k and ALD/CVD metal precursors market is expected to reach USD 705.9 million by 2022, according to a new study by Grand View Research, Inc. Significant development in the field of CVD/ALD processes, escalating demand for advanced semiconductor materials and application of high-k precursors to non-semiconductor arenas are the key growth strategies in the high-k and ALD/CVD metal precursors market. Growing demand for optoelectronic and microelectronic application with 99.9% purity requires clean room depositions with special manufacturing routes, which is expected to drive the market through the forecast period.

Strong potential of high-k precursors for multi-sector applications such as LED along with huge investments in wafer fabrication processes is estimated to expand the advantage in production capacity, yield and cost of metal precursors. The high-k and ALD/CVD metal precursors market is expected to exhibit high growth potential associated with 32/28/20 nm, 22/16/14 nm (first FinFET logic transistors) and further advanced materials and logic technology nodes. This growth can be attributed to various advantages offered by these processes such as industrial scaling, high compositional control and better step coverage for deposition on patterned substrates.

However, self-limiting surface reactions coupled with saturated processes in high-k ALD reactions are estimated to limit the growth of high-k metal precursors. The selection and design of appropriate metal-organic precursors is crucial for successfully develop new ALD processes.

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Further key findings from the study suggest:

  • The high-k and ALD/CVD metal precursors market primarily includes technologies based on interconnect, capacitors and metal gates. The ability to rapidly and cost-effectively fabricate the semiconductor that requires for a more complex 3D structure has spurred demand for high-k vapor/layer deposition processes over the past few years.

  • Capacitors segment accounted for over 35% of the overall market share in 2014. Growing number of DRAM manufacturers have been seeking to apply high-k capacitors for higher density memory in high volume processes which is expected to generate high revenue prospects across emerging economies such as China and Japan. High-k metal gate technology is used for transistor scaling, it accounted for over 15% of the overall market. Combination of metal gate technology and high-k dielectric provides a significant reduction in gate leakage current which is further anticipated to drive market growth over the forecast period.

  • Asia Pacific is expected to witness substantial growth over the forecast period. This may be primarily attributed to its advanced packaging base and large foundry of LED chip makers. Taiwan is projected to have the largest consumer base of semiconductor materials.

  • Notable companies operating in the high-k and ALD/CVD metal precursors market include Air Liquide, Dow Chemical, SAFC Hitech, Praxair and Air Products & Chemical (AP). Strategic initiatives towards the incorporation of intellectual property rights (IPR) protection measures are expected to have an increasing role in chemical designs. Increasing activity in IPR filings on precursor material compositions along with meeting stringent reliability standards is of the utmost importance so as to avoid failure.

Grand View Research has segmented the high-k and ALD/CVD metal precursors market on the basis of technology and region:

High-k and ALD/CVD Metal Precursors Technology Outlook (Revenue, USD Million, 2012 - 2022)

  • Interconnect

  • Capacitors

  • Gates

High-k and ALD/CVD Metal Precursors Regional Outlook (Revenue, USD Million, 2012 - 2022)

  • North America

    • U.S.

    • Canada

  • Europe

    • Germany

    • UK

  • Asia Pacific

    • China

    • India

    • Japan

  • Latin America

    • Brazil

    • Mexico

  • MEA

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