The global next-generation non-volatile memory market size was valued at USD 524.8 million in 2015 and is presumed to gain traction over the forecast period. The industry is expected to gain momentum owing to increasing demand for high scalable, fast, and economical memory solutions. With increasing data, there is an increasing need to manage and store the data and information for future references.
Next-generation non volatile memory market, by region, 2014 - 2024, (USD Million)
Industry players are aiming to provide power conservation technologies along with improved efficiency in the industry. Decreasing profit margins for traditional memory technologies are expected to be the key factor for the development of new technologies, which are expected to provide faster and more efficient storage methods.
The growing demand for mass storage and universal storage devices is expected to favor market growth over the forecast period. High designing cost and stability in extreme environmental conditions is expected to hinder the growth over the next six years.
Increasing demand in various applications such as industrial and replacement of flash memory may provide new opportunities for market growth over the forecast period. Increasing demand for flexible and wearable electronics may also provide new avenues for industry growth.
Non-volatile memory (NVM) is highly reliable and can be programmed using a simple microcomputer and in most modern electronic equipment; the segment accounted for the majority of the next-generation non-volatile memory market in 2015. Few non-volatile memories include Phase-Change memory (PCM), Ferroelectric RAM (FeRAM), Magneto-resistive RAM (MRAM), Resistive RAM (RRAM), flash, and spin-transfer torque RAM (STT-RAM).
The MRAM product segment dominated the overall industry in 2015 with a market size valued at USD 240.2 million. The ReRAM segment is anticipated to emerge as the fastest-growing product segment over the forecast period. The memory types are generally classified based on their functional properties with respect to the programming and erasing operations.
The industry products address the urgent need for some specific and small-form devices. Enterprise storage is expected to be the key application segment over the forecast period owing to the increasing adaptation of STT-MRAM and PCM memory. The Embedded MCU & Smart Card application segment is presumed to gain traction over the forecast period.
North America next generation non volatile memory market, by product, 2015 (USD Million)
Non-volatile memory is expected to improve the input and output performance of enterprise storage systems as their requirements are estimated to increase with the growing demand for web-based data. The adoption of PCM over NOR or flash memory in mobile phones is expected to increase. Microcontrollers and smart cards are likely to adopt PCM, MRAM, or STT-MRAM as a substitute to embed flash higher-density chips.
The Asia Pacific is expected to be the key regional market over the forecast period owing to the presence of key industry participants in countries such as China, South Korea, Japan, and India. Additionally, the growing computer and mobile phone industry are also expected to favor regional growth over the next six years.
Different interface technologies include DDR, SATA, SAS, PCIe, and I2C. DDR interface is majorly used high speed and memory demanding applications such as industrial, networking, and telecommunication equipment. They are also used in servers, workstations, and graphic cards.
DDR has the ability to fetch data on both the rising and falling edge of a clock cycle which doubles the data rate for a given clock frequency. SATA interface is primarily used in computer systems and laptops. PCIe interface is suitable for all computer applications including enterprise servers, consumer personal computers (PC), communication systems, and industrial applications for caching and buffering applications.
Key vendors in the industry are IBM Corp, Adesto Technologies, Everspin Technologies, Crossbar Inc, Fujitsu Ltd, Intel Corporation, Micron Technology, Samsung Electronics Co. Ltd., and Toshiba Corporation. Toshiba and South Korea-based SK Hynix are working on MRAM that offers high storage capacity and consumes two-thirds the power of DRAM, which is widely used in personal computers, smartphones, and other equipment.
Attribute |
Details |
Base year for estimation |
2015 |
Actual estimates/Historical data |
2014 - 2015 |
Forecast period |
2016 - 2024 |
Market representation |
Revenue in USD Million & CAGR from 2016 to 2024 |
Regional scope |
North America, Europe, Asia Pacific, and Rest of the world |
Report coverage |
Revenue forecast, company ranking, competitive landscape, growth factors. and trends |
15% free customization scope (equivalent to 5 analyst working days) |
If you need specific market information that is not currently within the scope of the report, we will provide it to you as a part of the customization |
This report forecasts revenue growth at global & regional levels and provides an analysis on the industry trends in each of the sub-segments from 2014 to 2024. For the purpose of this study, Grand View Research has segmented the global next generation non volatile memory market on the basis of product, application, and region:
Product Outlook (Revenue, USD Million; 2014 - 2024)
FeRAM
PCM
MRAM
ReRAM
Application Outlook (Revenue, USD Million; 2014 - 2024)
Mobile Phones
Cache Memory & Enterprise Storage
Industrial & Automotive
Mass Storage
Embedded MCU & Smart Cards
Regional Outlook (Revenue, USD Million; 2014 - 2024)
North America
Europe
Asia Pacific
Rest of the world (RoW)
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