The global gallium nitride semiconductor devices market is anticipated to reach USD 12.47 billion by 2030 and is projected to grow at a CAGR of 27.4% from 2025 to 2030, according to a new report by Grand View Research. The growing demand for fast chargers used in various consumer electronics applications worldwide is expected to drive market growth. Various smartphone companies such as Apple and Samsung are making efforts to develop fast chargers to enhance their customer experience and gain a competitive edge.
Gallium nitride semiconductors are also used in data center servers to offer potential energy savings, thereby contributing to the growth of the market. The proliferation of cloud technology necessitates the expansion of data centers, which are significant energy consumers. One strategy to mitigate energy loss involves eliminating an entire stage of power conversion when transferring power within the data center.
Currently, power undergoes two conversions: from 48 V on the backplane to 12 V for distribution on processing boards and finally to around 1 V at the point of use. Leveraging the high switching speed, compact size, and improved efficiency of gallium nitride, power supply designers can now convert directly from 48 V to the required 1 V at the point of use, bypassing the intermediate step at 12 V. This single-stage architecture presents substantial potential energy savings, especially considering the rapid growth of computing power and data centers supporting cloud infrastructure.
The enhanced-mode version of GaN is widely used in the development of space applications, and it is further driving market growth. The demand for commercial GaN power devices is high among businesses as these devices offer high performance compared to traditional silicon technology-based Rad Hard devices. GaN power devices are used in applications such as drones, satellites, spacecraft, and robotics.
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The opto-semiconductors segment dominated the industry with a revenue share of 36.3% in 2024.
The transistor segment dominated the market due to its superior performance characteristics in high-frequency and high-power applications.
The 4-inch segment dominated the market in 2024 with a share of 38.6%. This is because 4-inch wafers facilitate the large-scale production of semiconductor devices.
The information & communication technology (ICT) segment dominated the market with a revenue share of 23.5% in 2024.
North America gallium nitride (GaN) semiconductor devices market dominated globally in 2024, with the largest revenue share of 34.3%.
Grand View Research has segmented the global gallium nitride semiconductor devices market on the basis of product, component, wafer size, end use, and region:
Gallium Nitride Semiconductor Devices Product Outlook (Revenue, USD Million, 2018 - 2030)
GaN Radio Frequency Devices
Opto-semiconductors
Power Semiconductors
Gallium Nitride Semiconductor Devices Component Outlook (Revenue, USD Million, 2018 - 2030)
Transistor
Diode
Rectifier
Power IC
Others
Gallium Nitride Semiconductor Devices Wafer Size Outlook (Revenue, USD Million, 2018 - 2030)
2-inch
4-inch
6-inch
8-inch
Gallium Nitride Semiconductor Devices End Use Outlook (Revenue, USD Million, 2018 - 2030)
Automotive
Consumer Electronics
Defense & Aerospace
Healthcare
Industrial & Power
Information & Communication Technology
Others
Gallium Nitride Semiconductor Devices Regional Outlook (Revenue, USD Million, 2018 - 2030)
North America
U.S.
Canada
Mexico
Europe
U.K.
Germany
France
Asia Pacific
India
China
Japan
South Korea
Australia
Latin America
Brazil
Middle East & Africa
KSA
UAE
South Africa
List of Key Players of Gallium Nitride Semiconductor Devices Market
Fujitsu Ltd.
Efficient Power Conversion Corporation
Transphorm, Inc.
Infineon Technologies AG
NXP Semiconductors.
Qorvo, Inc
Texas Instruments Incorporated.
Toshiba Corporation
GaN Systems
NTT Advanced Technology Corporation.
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