Gallium Nitride Semiconductor Devices Market Worth $7.42 Billion By 2028

July 2021 | Report Format: Electronic (PDF)

Gallium Nitride Semiconductor Devices Market Growth & Trends

The global gallium nitride semiconductor devices market size is expected to reach USD 7.42 billion by 2028, registering a CAGR of 21.5% from 2021 to 2028, according to a new study conducted by Grand View Research, Inc. The growing applications of gallium nitride in a wide variety of semiconductor devices are expected to augment the market growth. Additionally, the rapid technological advancements in the performance of GaN-based semiconductors are anticipated to promote market growth further. The demand for wireless communication devices, primarily in defense communication, is expected to drive the demand for gallium nitride semiconductors. Gallium nitride technology is being increasingly implemented for the development of amplifiers widely used in wireless communication, including Class E, Class F, and Class C power amplifiers.

Various aerospace and defense technology companies such as L3Harris Technologies, Inc.; Northrop Grumman Corporation; and BAE Systems are collaborating with government agencies for incorporating gallium nitride semiconductors in the military and radar applications. For instance, in February 2012, Northrop Grumman Corporation opened its Advanced Technology Laboratory for developing gallium nitride semiconductors for critical military programs. The company, along with the U.S. government, has invested more than USD 300 million for developing and integrating GaN semiconductors in military systems for enhancing the capabilities of space, aircraft, and ground defense communication systems. These factors are expected to drive the demand for GaN semiconductors across wireless applications.

In recent years, there has been an increase in demand for gallium nitride semiconductor devices in electric vehicle supply equipment such as onboard charging stations and EV charging kiosks. The lower switching frequency range of GaN devices makes them suitable for use in GaN-based DC-to-DC converters that are used in onboard charging stations, which bodes well for the growth of the gallium nitride semiconductor devices market. Furthermore, the on-going research and development activities worldwide aimed at the increased adoption of GaN devices in electric vehicles are anticipated to impact market growth significantly. For instance, in October 2019, Nagoya University launched an electric car that entirely uses gallium nitride semiconductor devices and named it All GaN Vehicle. This vehicle is 20% more efficient than current electric vehicles developed using SiC-based devices. In contrary, the ongoing COVID-19 pandemic has laid huge impact on sales and deployment of gallium nitride semiconductor devices in 2020. The impact of COVID-19 on the market is anticipated to be witnessed in coming months/ years.

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Gallium Nitride Semiconductor Devices Market Report Highlights

  • The gallium nitride radio frequency devices segment is expected to expand at the highest CAGR from 2021 to 2028 as a result of the growing demand for these products from the military for applications such as Electronic Warfare (EW) systems and Active Electronically-Steered Array (AESA) radars

  • The power ICs segment is anticipated to register a high CAGR over the forecast as a result of the increasing demand for power converters used in data centers that run on high voltage DC power distribution architecture

  • The 8-inch wafer segment is anticipated to experience high traction owing to rising usage in automotive applications such as Infotainment Head Unit (IDU) and Advanced Driver Assistance Systems (ADAS)

  • The growing popularity of autonomous vehicles is boosting the demand for LiDAR sensors in driverless navigation systems that is anticipated to be a major factor boosting the growth of the automotive end use segment over the next eight years

  • The Asia Pacific regional market is expected to emerge as the fastest-growing region, owing to the surge in demand for efficient and high-performance RF components and a surge in the electric vehicle production in countries China, Japan, and South Korea

Gallium Nitride Semiconductor Devices Market Segmentation

Grand View Research has segmented the global Gallium Nitride (GaN) semiconductor devices market based on product, component, wafer size, end use, and region:

GaN Semiconductor Devices Product Outlook (Revenue, USD Million, 2016 - 2028)

  • GaN Radio Frequency Devices

  • Opto-semiconductors

  • Power Semiconductors

GaN Semiconductor Devices Component Outlook (Revenue, USD Million, 2016 - 2028)

  • Transistor

  • Diode

  • Rectifier

  • Power IC

  • Others

GaN Semiconductor Devices Wafer Size Outlook (Revenue, USD Million, 2016 - 2028)

  • 2-inch

  • 4-inch

  • 6-inch

  • 8-inch

GaN Semiconductor Devices End-use Outlook (Revenue, USD Million, 2016 - 2028)

  • Automotive

  • Consumer Electronics

  • Defense & Aerospace

  • Healthcare

  • Information & Communication Technology

  • Industrial & Power

  • Others

GaN Semiconductor Devices Regional Outlook (Revenue, USD Million, 2016 - 2028)

  • North America

    • U.S.

    • Canada

  • Europe

    • U.K.

    • Germany

  • Asia Pacific

    • India

    • China

    • Japan

  • Latin America

    • Brazil

  • Middle East & Africa

List of Key Players of the Gallium Nitride (GaN) Semiconductor Devices Market

  • Cree, Inc.

  • Efficient Power Conversion Corporation

  • Fujitsu Ltd.

  • GaN Systems

  • Infineon Technologies AG

  • NexgenPowerSystems

  • NXP Semiconductor

  • Qorvo, Inc.

  • Texas Instruments Incorporated

  • Toshiba Corporation

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