The global super junction MOSFET market has witnessed substantial growth over the last decade owing to the increased utility of MOSFETs across several applications. The market is poised for high growth over the forecast period owing to significant innovations in fabrication and packaging technology. Key applications include lighting, power supply, and display devices. Power supply applications account for considerable market share, whereas super junction-MOSFET applications in renewable energy sources, electric vehicles, and hybrid electric vehicles are expected to witness high growth over the next six years. Japan, China, and Germany constitute the key demand regions and are expected to witness considerable growth over the forecast period.
Multiple-epitaxy method is widely incorporated as a fabrication technique in the super junction MOSFET market, whereas the deep-trench method has gained prominence due to inherent advanced features. Compact packaging techniques like power flat and power module have helped super junction MOSFET to achieve compact and smaller size, thereby increasing their utility in applications where space is a constraint.
High ON-state resistance, better performance, low heat indulgence, low cost, and high switching frequency are some of the key factors driving the super junction MOSFET market. Lower process variations, lower output resistance, increased junction leakage, increased gate-oxide leakage, and higher sub-threshold conductor are some factors, which are expected to hinder market growth over the forecast period.
The key players manufacturing super junction MOSFET include Toshiba Corporation, Fujitsu Ltd., Infineon Technologies, Alpha & Omega Semiconductor, Renesas Electronics Corporation, Vishay Inter-Technology, Fairchild Semiconductor, NXP Semiconductors, ST Microelectronics N.V, International Rectifiers, ON Semiconductors and ROHM Semiconductor.
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